Vertically integrated dual gate transistor structure and method of making same

US7535039B1 · kind B1 · utility

Assignee

• NORTHROP GRUMMAN CORPORATION · US

Inventors

• Eric J. Stewart · Silver Spring, US
• Stephen Van Campen · Clarksville, US
• Rowland C. Clarke · Saltsburg, US

Key dates

• Filing date: Jun 16, 2006
• Grant date: May 19, 2009
• Expiry date: Oct 11, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/012

Abstract

A dual gate power switch comprised of a vertical arrangement of a normally off SIT (static induction transistor) in series with a normally on SIT in a monolithic semiconductor structure. The structure includes a first pillar having at the base thereof laterally extending shoulder portions having sections of a first gate for controlling the normally off SIT. The structure includes a second pillar, of a width greater than the first pillar and which also has laterally extending shoulder portions having sections of a second gate for controlling the normally on SIT. Contacts are provided for SIT operation.