Lamb wave device
US7535152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2008 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Apr 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02228
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A Lamb wave device includes a base substrate, a piezoelectric thin film which is provided on the base substrate and which has a floating portion floating above the base substrate, the floating portion having a first surface facing the base substrate and a second surface opposite to the first surface, and an IDT electrode disposed on at least one of the first and the second surfaces of the piezoelectric thin film. The piezoelectric thin film is made of LiTaO3 or LiNbO3, and the c-axis of the piezoelectric thin film is set in approximately the same direction as that of a line substantially perpendicular to the first and the second surfaces of the piezoelectric thin film, and the crystal structure of the piezoelectric thin film is a rotation twin crystal having the c-axis functioning as the rotation axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.