Piezoelectric thin-film resonator
US7535154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2008 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Apr 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/587
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a piezoelectric resonator, a portion of a thin film unit is supported by a substrate. A portion of the thin film unit acoustically isolated from the substrate includes a) a vibration unit and b) an additional film. The vibration unit includes a piezoelectric film sandwiched between a pair of electrodes. The piezoelectric film is overlapped with the pair of electrodes in plan view. The additional film is disposed on one of the piezoelectric film and the electrodes so as to extend along at least a portion of the periphery of the vibration unit. When x (MN·second/m3) denotes an acoustic impedance of the additional film defined by the square root of the product of the density and Young's modulus, A denotes the product of the density and the thickness of the additional film, B denotes the product of the densities and the thicknesses of the electrodes, and y=A/B, the following conditional expressions are satisfied:In the range of 9.0≦x<44.0, 0.0092·x+0.88≦y<0.067·x+0.60 (1a)In the range of 44.0≦x<79.0, −0.0035·x+1.45≦y<0.015·x+2.9 (1b).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.