Magnetoresistive head with improved in-stack longitudinal biasing layers
US7535683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2004 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Oct 24, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3932
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive head and a fabricating method thereof accomplishing high sensitivity and low noise are provided even if track width narrowing makes progress. In one embodiment, a pinned layer includes a laminate which includes at least two magnetic layers and where adjacent magnetic layers are coupled antiferromagnetically to each other, and a mechanism to apply a longitudinal biasing field to a free layer is made to function by laminating a nonmagnetic separate layer/longitudinal biasing layer/antiferromagnetic layer connecting the free layer and opposite a nonmagnetic conductive layer (or nonmagnetic tunneling barrier layer). Controlling a magnetization direction of the longitudinal biasing layer which bears application of a longitudinal biasing field to the pinned layer and free layer is achieved by annealing carried out while applying a magnetic field in a track width direction and applying a magnetic field at room temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.