Magnetic memory device and method for fabricating the same
US7535755B2 · kind B2 · utility
2Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2006 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Mar 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The magnetic memory device includes a magnetic shield film 48, and a magnetoresistive effect element 62 formed over the magnetic shield film 48 and including a magnetic layer 52, a non-magnetic layer 54 and a magnetic layer 56, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection, and a second magnetic shield film 68 formed over the side wall of the magnetoresistive effect element 62. Thus, the arrival of the leakage magnetic field from the interconnection near the magnetoresistive effect element 62 can be effectively prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.