Mask for forming fine pattern and method of forming the same
US7536671B2 · kind B2 · utility
3Cited by
11References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2006 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Jun 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a mask for forming a fine pattern to completely transfer a first and a second pattern from the mask onto a receiving object, and a method of forming the mask, the mask includes a first pattern, a second pattern, and a supplemental pattern. The first pattern repeats in a first direction. The second pattern is arranged between and parallel to the first pattern and has a first width W1. The supplemental pattern is disposed between the first pattern and the second pattern, and is spaced apart by a first distance D1 in the first direction from the second pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.