Use of metal capped seed layers for the fabrication of perpendicular thin film heads
US7536777B2 · kind B2 · utility
2Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2006 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | May 31, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Methods and structures for the fabrication of perpendicular thin film heads are disclosed. Prior to the deposition of shield structures, capped seed layers having a dual layer structure are utilized, improving photo resist adhesion and plated shield adhesion, without the need to deposit, then remove, traditional inorganic anti-reflection coatings prior to shield plating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.