Method of manufacturing nano size-gap electrode device
US7537883B2 · kind B2 · utility
2Cited by
3References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 6, 2006 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Aug 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/621
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.