Photoresist composition, method for forming film pattern using the same, and method for manufacturing thin film transistor array panel using the same
US7537974B2 · kind B2 · utility
2Cited by
2References
19Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 2, 2006 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Jul 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist composition includes a novolac resin havingwhere each of R1, R2, R3, and R4 is an alkyl group having a hydrogen atom or between one through six carbon atoms and n is an integer ranging from zero through three; and a mercapto compound havingZ1-SH, orSH-Z2-SH,where each of Z1 and Z2 is an alkyl group or an alkyl group having one through twenty carbon atoms, a sensitizer, and a solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.