Method of manufacturing semiconductor device
US7538047B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2006 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Mar 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.