Charge multiplication CMOS image sensor and method for charge multiplication
US7538307B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 19, 2008 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Feb 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/77
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel for a CMOS photo sensor having a photosensitive element configured to collect charge when light strikes the photosensitive element, a charge-multiplication circuit having a first electrode, a second electrode, and a third electrode, the charge-multiplication circuit is configured to transfer the charge from the photosensitive element to the first electrode, apply a predetermined voltage to the second electrode to induce charge multiplication, transfer the charge from the first electrode to the second electrode for charge multiplication, and transfer a plurality of charge from the second electrode to the third electrode and onto a sense node, and a readout circuit coupled to the sense node, the readout circuit measures a voltage corresponding to the plurality of charge transferred to the sense node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.