Field effect transistor with aluminum and phosphorus etch stop layer
US7538365B2 · kind B2 · utility
0Cited by
3References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2005 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Mar 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4738
Abstract
A III-V field effect transistor includes a semiconductor channel layer having an electrically conducting channel and an ohmic contact layer on the semiconductor channel layer. The ohmic contact layer has a recess structure disposed therethrough to the semiconductor channel layer. The bottom of the ohmic contact layer includes an etch stop layer including Aluminum and Phosphorous and defining the shape of the recess at its junction with the semiconductor channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.