Semiconductor laser device and method for fabricating the same
US7539230B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | May 26, 2009 |
| Priority date | — |
| Expiry date | Sep 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes a red-light-emission portion and an infrared-light-emission portion on a single substrate. The red-light-emission portion has a structure in which an AlGaInP-based active layer is sandwiched by a first cladding layer of a first conductivity type having a striped portion and a second cladding layer of a second conductivity type. The infrared-light-emission portion has a structure in which an AlGaAs-based active layer is sandwiched by a third cladding layer of the first conductivity type having a striped portion and a fourth cladding layer of the second conductivity type. The first, second, third, and fourth cladding layers are all made of an AlGaInP-based material. When in these layers, the Al:Ga contents are represented by X1:1-X1, X2:1-X2, X3:1-X3, and X4:1-X4, respectively, X1≧X2 and X3≧X4 are satisfied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.