Semiconductor device group and method for fabricating the same, and semiconductor device and method for fabricating the same

US7539963B2 · kind B2 · utility

Assignee

• FUJITSU MICROELECTRONICS LIMITED · JP

Inventors

• Taiji Ema · Inabe, JP
• Hideyuki Kojima · Kawasaki, JP
• Toru Anezaki · Kawasaki, JP
• Shinichi Nakagawa · Kasai, JP

Key dates

• Filing date: Oct 21, 2004
• Grant date: May 26, 2009
• Expiry date: Oct 21, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/49

Abstract

The semiconductor group comprises a first semiconductor device including a first design macro and a nonvolatile memory, and a second semiconductor device including a second design macro having identity with the first design macro and including no nonvolatile memory. The first design macro includes a first active region and a first device isolation region formed on a first semiconductor substrate. The second design macro includes a second active region and a second device isolation region formed on a second semiconductor substrate. A curvature radius of an upper end of the first active region in a cross section is larger than a curvature radius of an upper end of the second active region in a cross section. A difference in height between a surface of the first active region and a surface of the first device isolation region is larger than a difference in height between a surface of the second active region and a surface of the device isolation region.