Photoelectric conversion device, its manufacturing method, and image pickup device
US7541211B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2005 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Apr 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°<φ≦45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle α with the two plane direction within a range of 0°<α<90°.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.