Semiconductor device having three-dimensional construction and method for manufacturing the same
US7541257B2 · kind B2 · utility
1Cited by
8References
12Claims
0Family size
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Key dates
| Filing date | Sep 12, 2006 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Sep 12, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.