Interconnect substrate, semiconductor device, methods of manufacturing the same, circuit board, and electronic equipment
US7541278B2 · kind B2 · utility
0Cited by
14References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 17, 2008 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Jul 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/016
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A first conductive layer is formed. An insulating layer is formed so that at least a part of the insulating layer is disposed on the first conductive layer. A second conductive layer is formed so that at least a part of the second conductive layer is disposed on the insulating layer over the first conductive layer. Each of the first and second conductive layers is formed by discharging drops of a solvent containing fine particles of a conductive material. The insulating layer is formed by discharging drops of a solvent containing fine particles of an insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.