Solid-state imaging device
US7541631B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2007 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Jan 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/151
Abstract
A solid-state imaging device including: a plurality of photodiode parts (1); a plurality of vertical charge transfer parts (2) each of which reads out a signal charge and transfers the signal charge in a vertical direction; and a plurality of shade films (5) that have conductivity, which supplies a transfer pulse via the shade film (5), is used. The vertical charge transfer parts (2) respectively have transfer channels (13) and transfer electrodes (3). The shade film (5) is formed above the corresponding vertical charge transfer part (2) via an insulation layer (21) that insulates the shade film (5) from the transfer electrodes (3). The insulation layer (21) has a thick part (8) in a part of the insulation layer (21) where the shade film (5) is overlapped on a side of the photodiode part (1) that is a subject to be read out by the vertical charge transfer part (2).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.