Patent · US Active

High-linearity low noise amplifier and method

US7541875B2 · kind B2 · utility

10Cited by

2References

20Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Stewart S. Taylor · Beaverton, US
Jon Sweat Duster · Beaverton, US

Key dates

Filing date	May 11, 2007
Grant date	Jun 2, 2009
Priority date	—
Expiry date	Jul 11, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH03F2200/294
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Embodiments of a high-linearity low-noise amplifier (LNA) and method are generally described herein. Other embodiments may be described and claimed. In some embodiments, an RF input signal may be amplified with a cascode amplifier and a common-gate stage. The common-gate stage is dynamically biased based on an output voltage of the common-gate stage to allow an output voltage swing to be shared between the cascode amplifier and the common-gate stage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.