Patent · US Active

Multilayer zinc oxide varistor

US7541910B2 · kind B2 · utility

3Cited by
8References
3Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 25, 2006
Grant dateJun 2, 2009
Priority date
Expiry dateMar 28, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01C7/18
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A multilayer zinc oxide varistor without bismuth oxide system ingredients, and having variable breakdown voltages by controlling the thickness of the ceramic material; the varistor is bismuth-free and composed of zinc oxide as the primary constituent with alkaline earth element (Ba) as first additive, at least one of transition elements of Mn, Co, Cr, or Ni as second additives, at least one of rare earth elements of Pr, La, Ce, Nd or Tb as third additives and at least one of B, Si, Se, Al, Ti, W, Sn, Sb, Na, or K as rest additives, and the bismuth-free and zinc oxide based varistor exhibits an excellent ESD (Electro-Static Discharge) withstanding characteristic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.