Method for measuring thickness of thin film, method for forming polycrystal semiconductor thin film, method for manufacturing semiconductor device, apparatus for manufacturing the same, and method for manufacturing image display device
US7542152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2006 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Aug 22, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/0633
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A laser light is projected to a thin film deposited on a transparent substrate, and measurement is performed on the entire measurement area of the substrate, and transmission intensity is measured by a transmission light intensity monitor and reflection light intensity is measured by a reflection light intensity monitor at the same points and at the same number of points on the substrate. From the value of “A=1−(R+T)” where R represents reflectivity and T is transmissivity, film thickness is measured and evaluated from the relation of the value A with film thickness. By this procedure, film thickness can be determined on 10,000 substrates or more per minute and film thickness of thin film can be measured over the entire substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.