Semiconductor optical amplification device and optical integrated circuit
US7542201B2 · kind B2 · utility
5Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2006 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Feb 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor optical amplification device is disclosed that has a gain spectrum of a wide bandwidth. The semiconductor optical amplification device includes an InP substrate and an active layer on the InP substrate. The active layer has a quantum well structure formed by alternately stacking a barrier layer and a well layer, the barrier layer is formed from a tensile-strained InGaAs film, and the well layer is formed from a compressively-strained InGaAs film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.