Silicon controlled rectifier for the electrostatic discharge protection
US7542253B2 · kind B2 · utility
13Cited by
12References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2004 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | May 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/251
Abstract
The present invention relates to an SCR (Silicon Controlled Rectifier) for the ESD (electrostatic discharge) protection comprising two terminal electrodes of a first electrode and a second electrode, a PMOS, an NMOS and an SCR structure. By utilizing an embedded SCR, a whole-chip ESD protection circuit design can be obtained. The present invention is suitable for IC products, and for applications by IC design industries and IC foundry industries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.