Semiconductor device and power conversion apparatus using the same
US7542317B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2006 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Aug 10, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The power conversion apparatus uses the semiconductor device. Said semiconductor device includes a first group of power semiconductor elements at least one of which is electrically connected between a first potential and a third potential, a second group of power semiconductor elements at least one of which is electrically connected between a second potential and the third potential, and a third group of power semiconductor elements at least one of which is electrically connected between the first potential and the third potential. The second group is disposed between the first group and third group.Thereby, a low-loss semiconductor device having both inductance reducibility and heat generation balancing capability and also an electric power conversion apparatus using the same is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.