AlGaInN-based lasers with dovetailed ridge
US7542497B2 · kind B2 · utility
2Cited by
2References
9Claims
0Family size
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Key dates
| Filing date | Jul 18, 2007 |
| Grant date | Jun 2, 2009 |
| Priority date | — |
| Expiry date | Jul 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for fabricating lasers capable of emitting blue light wherein a GaN wafer is etched to form laser waveguides and mirrors using a temperature of over 500° C. and an ion beam in excess of 500 V in CAIBE, and wherein said laser waveguide has inwardly angled sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.