Method for manufacturing semiconductor laser element
US7544535B2 · kind B2 · utility
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1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2007 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | May 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The method for manufacturing a semiconductor laser element according to the present invention has the steps of: forming a semiconductor laminated structure having an active layer composed of a semiconductor material containing Al; etching the semiconductor laminated structure to form a mesa; forming a first burying layer at a first growing temperature so as to coat the side of the mesa; and forming a second burying layer at a second growing temperature higher than the first growing temperature on the first burying layer to bury the circumference of the mesa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.