Cross-talk and back side shielding in a front side illuminated photo detector diode array
US7544947B2 · kind B2 · utility
12Cited by
10References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2007 |
| Grant date | Jun 9, 2009 |
| Priority date | — |
| Expiry date | Apr 26, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/2019
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A front side illuminated photo detector array is shielded from X-ray cross-talk by filling the septa between individual photo detector diodes with a high atomic number material such as tungsten. The processing circuitry is also shielded from stray X-rays by a barrier such as tungsten placed between each photo detector diode and the processing circuitry. This barrier serves a dual role as shielding the processing circuitry from stray X-ray radiation and acting as the electrical contact between the detector diode and the circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.