Lateral current blocking light-emitting diode and method for manufacturing the same

US7544971B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventor

• Shi-Ming Chen · Danei, TW

Key dates

• Filing date: Sep 14, 2005
• Grant date: Jun 9, 2009
• Expiry date: Jan 22, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8162

Abstract

A lateral current blocking light-emitting diode and a method for manufacturing the same are disclosed. The light-emitting diode comprises an insulating substrate, a semiconductor epitaxial structure and electrodes of different conductivity types. The semiconductor epitaxial structure has at least one trench and comprises a first conductivity type semiconductor layer deposed on a portion of the insulating substrate, in which a bottom of the trench is beneath the first conductivity type semiconductor layer, an active layer located on a portion of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer deposed on the active layer. A first conductivity type electrode is deposed on the exposed portion of the first conductivity type semiconductor layer, and a second conductivity type electrode is deposed on a portion of the second conductivity type semiconductor layer, in which the trench covers the shortest conductive path between the first conductivity type electrode and the second conductivity type electrode, so as to block the current between the first conductivity type electrode and the second conductivity type electrode from flowing throu…