Capacitive micromachined ultrasound transducer fabricated with epitaxial silicon membrane

US7545012B2 · kind B2 · utility

Assignee

• General Electric Company · US

Inventors

• Lowell Scott Smith · Niskayuna, US
• David Martin Mills · Niskayuna, US
• Jeffrey Fortin · Niskayuna, US
• Wei-Cheng Tian · Clifton Park, US
• John Logan · Danville, US

Key dates

• Filing date: Mar 30, 2006
• Grant date: Jun 9, 2009
• Expiry date: Mar 30, 2026

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B06B1/0292
• WIPO field: Chemical engineering
• WIPO sector: Chemistry

Abstract

A capacitive micromachined ultrasound transducer (cMUT) cell is presented. The cMUT cell includes a lower electrode. Furthermore, the cMUT cell includes a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electrode, wherein the diaphragm comprises one of a first epitaxial layer or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer.