Infrared sensor systems and devices

US7547886B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Michael Mueller · Gifhorn, DE
• Jim Chih-Min Cheng · Berkeley, US
• Albert P. Pisano · Livermore, US
• Thomas H. Cauley, III · Redwood City, US

Key dates

• Filing date: Jul 7, 2006
• Grant date: Jun 16, 2009
• Expiry date: Dec 28, 2026

Classification

• Technology area (CPC G): Physics
• CPC primary: G01J5/38
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

An organic material can be used in a modified strain gauge for IR transduction, resulting in an organic IR sensor. Infrared radiation incident on the organic material modulates a displacement of the material in order to detect the presence and intensity of IR radiation. This innovative design doesn't require cooling, and is sensitive to 9 and 3 μm—wavelengths that are emitted by mammals and forest fires, respectively. In addition, a photomechanical polymer can be used in a transistor based on a thin-film transistor (TFT), also resulting in an IR sensor. Through careful synthesis of the polymers, the photomechanical response of the transistor can be tailored to certain IR bands for detection purposes.