Phase-change memory device using Sb-Se metal alloy and method of fabricating the same
US7547913B2 · kind B2 · utility
12Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2006 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Aug 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
Abstract
Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.