Nonvolatile memory devices and methods of fabricating the same
US7547942B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2007 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Feb 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
Abstract
A nonvolatile memory device includes a semiconductor substrate including a cell region and a peripheral circuit region, a cell gate on the cell region, and a peripheral circuit gate on the peripheral circuit region, wherein the cell gate includes a charge storage insulating layer on the semiconductor substrate, a gate electrode on the charge storage insulating layer, and a conductive layer on the gate electrode, and the peripheral circuit gate includes a gate insulating layer on the semiconductor substrate, a semiconductor layer on the gate insulating layer, an ohmic layer on the semiconductor layer, and the conductive layer on the ohmic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.