Porous gallium oxide films and methods for making and patterning the same
US7547953B2 · kind B2 · utility
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4References
22Claims
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Key dates
| Filing date | Jan 29, 2007 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Nov 18, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/125
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Gallium oxide films for sensing gas comprise Ga2O3 and have a porosity of at least about 30%. Such films can be formed by coating a substrate with a solution comprising: a gallium salt and a porogen comprising an organic compound comprising a hydrophilic chain and a hydrophobic chain; and heating the substrate to a temperature in the range from about 400° C. to about 600° C. while exposing the substrate to an oxygen-containing source to convert the gallium salt to a gallium oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.