High-power optically end-pumped external-cavity semiconductor laser
US7548569B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2006 |
| Grant date | Jun 16, 2009 |
| Priority date | — |
| Expiry date | Sep 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/183
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high-power optically end-pumped external-cavity semiconductor laser is provided having a laser chip including an active layer and a distributed Bragg reflector (DBR) for emitting light of a fundamental wavelength; an external mirror spaced apart from a first surface of the laser chip and forming a cavity resonator with the DBR; a second harmonic generation (SHG) crystal positioned between the external mirror and the laser chip; and a micro-lens integrated heat sink dissipating heat generated by the laser chip and bonded to a second surface of the laser chip to focus a pumping beam to be incident on the second surface of the laser chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.