Patent · US Active

Multi wavelength mask for multi layer printing on a process substrate

US7550236B2 · kind B2 · utility

2Cited by

4References

9Claims

0Family size

Assignee

LSI · US

Inventors

Duane B. Barber · Portland, US
Phong Do · Camas, US
Douglas M. Horn · Irvine, US

Key dates

Filing date	Sep 29, 2004
Grant date	Jun 23, 2009
Priority date	—
Expiry date	Dec 18, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/50
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A mask for exposing a first layer and a second layer on a process substrate, where the first and second layers are two separate layers of an integrated circuit. The mask includes a mask substrate that is substantially completely transmissive to a first wavelength of light and a second wavelength of light. A layer of a first material is disposed on the mask substrate, where the first material is substantially opaque to the first wavelength of light. The layer of the first material is patterned for the first layer. A layer of a second material is disposed on the mask substrate, where the second material is substantially opaque to the second wavelength of light. The layer of the second material is patterned for the second layer, where the layer of the first material and the layer of the second material are aligned on the mask substrate for proper alignment of the first and second layers on the process substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.