Method for delineation of phase change memory (PCM) cells separated by PCM and upper electrode regions modified to have high film resistivity
US7550313B2 · kind B2 · utility
17Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2007 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Aug 6, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/734
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for forming a Phase Change Material (PCM) cell structure comprises forming both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM is protected from damage by a conductive encapsulating layer. Electrical isolation between adjacent cells is provided by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof, thereby forming high electrical resistance regions between the cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.