Semiconductor device and method of manufacturing the same
US7550392B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2005 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Sep 28, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/95
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device manufacturing method, includes a step of forming a first alumina film (underlying insulating film) 37 on a semiconductor substrate 20, a step of forming a first conductive film 41, a ferroelectric film 42, and a second conductive film 43 in sequence on the first alumina film 37, a step of forming a mask material film 45 on the second conductive film 43, a step of shaping the mask material film 45 into an auxiliary mask 45a, a step of shaping the second conductive film 43 into an upper electrode 43a by an etching using the auxiliary mask 45a and a first resist pattern 46 as a mask, a step of shaping the ferroelectric film 42 into a capacitor dielectric film 42a by patterning, and a step of shaping the first conductive film 41 into a lower electrode 41a by patterning, whereby a capacitor Q is constructed by the lower electrode 41, the capacitor dielectric film 42a, and the upper electrode 43a.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.