GaTe semiconductor for radiation detection
US7550735B2 · kind B2 · utility
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34Claims
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Key dates
| Filing date | Jun 29, 2007 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Jun 29, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/24
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.