Transistor and its method of manufacture
US7550791B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2007 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Dec 10, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49105
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An embodiment includes a transistor and a method of manufacturing the transistor that includes carbon nano-tubes. The physical behavior of the carbon nano-tubes, particularly a bending action that alters a normally linear configuration, is affected by elements of the transistor, such as a space between the carbon nano-tube and a conductor. The space is formed by removing a spacer. A dimension of the spacer between the carbon nano-tube and the conductor is efficiently controlled by adjusting its width. An operation voltage of the transistor relates to the physical behavior of the carbon nano-tubes, and thus to the dimensions of the spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.