Nitride semiconductor device
US7550821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2007 |
| Grant date | Jun 23, 2009 |
| Priority date | — |
| Expiry date | Dec 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor device includes: a substrate; a nitride semiconductor layer formed on a main surface of the substrate and having a channel region through which electrons drift in a direction parallel to the main surface; and a plurality of first electrodes and a plurality of second electrodes formed spaced apart from each other on an active region in the nitride semiconductor layer. An interlayer insulating film is formed on the nitride semiconductor layer. The interlayer insulating film has openings that respectively expose the first electrodes and has a planarized top surface. A first electrode pad is formed in a region over the active region in the interlayer insulating film and is electrically connected to the exposed first electrodes through the respective openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.