Patent · US Active

Silicon carbide single crystal and production thereof

US7553373B2 · kind B2 · utility

8Cited by
11References
2Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 18, 2006
Grant dateJun 30, 2009
Priority date—
Expiry dateAug 16, 2027

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC30B29/36
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method of producing a silicon carbide single crystal, having:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.