Polishing slurries and methods for chemical mechanical polishing
US7553430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2006 |
| Grant date | Jun 30, 2009 |
| Priority date | — |
| Expiry date | Sep 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent. Methods for polishing copper by chemical-mechanical planarization include polishing copper with low pressures using a polishing pad and a aqueous slurries including soluble salts of molybdenum dissolved in an oxidizing agent and molybdic acid dissolved in an oxidizing agent, particles of MoO3 dissolved in an oxidizing agent, and particles of MoO2 dissolved in an oxidizing agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.