Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell
US7553691B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2005 |
| Grant date | Jun 30, 2009 |
| Priority date | — |
| Expiry date | Jan 29, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method and a multijunction solar device having a high band gap heterojunction middle solar cell are disclosed. In one embodiment, a triple-junction solar device includes bottom, middle, and top cells. The bottom cell has a germanium (Ge) substrate and a buffer layer, wherein the buffer layer is disposed over the Ge substrate. The middle cell contains a heterojunction structure, which further includes an emitter layer and a base layer that are disposed over the bottom cell. The top cell contains an emitter layer and a base layer disposed over the middle cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.