Composition for stripping photoresist and method for manufacturing thin transistor array panel using the same
US7553710B2 · kind B2 · utility
0Cited by
4References
11Claims
0Family size
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Key dates
| Filing date | Oct 17, 2007 |
| Grant date | Jun 30, 2009 |
| Priority date | — |
| Expiry date | Nov 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a photoresist stripper including about 5 wt % to about 20 wt % alcohol amine, about 40 wt % to about 70 wt % glycol ether, about 20 wt % to about 40 wt % N-methyl pyrrolidone, and about 0.2 wt % to about 6 wt % chelating agent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.