Solid-state image pickup device and method of manufacturing the same

US7554141B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Tetsuya Yamaguchi · Yokohama, JP
• Hiroshige Goto · Yokohama, JP
• Hirofumi Yamashita · Kawasaki, JP
• Hisanori Ihara · Yokohama, JP
• Ikuko Inoue · Kawasaki, JP
• Nagataka Tanaka · Yokohama, JP

Key dates

• Filing date: Mar 30, 2006
• Grant date: Jun 30, 2009
• Expiry date: Jun 18, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/807

Abstract

A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.