Versatile system for integrated sense transistor
US7554152B1 · kind B1 · utility
19Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2006 |
| Grant date | Jun 30, 2009 |
| Priority date | — |
| Expiry date | Jan 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
The present invention provides a versatile system for producing sense transistors having optimized thermal and parametric matching with an associated power transistor. A power transistor is formed, having a plurality of alternating source and drain structures, with a plurality of gate structures interposed there between. At a desired location within the power transistor—which may be in a central location, or symmetrically distributed—one or more sense transistors are formed from an isolated portion of either a drain or source structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.