Lateral SOI component having a reduced on resistance

US7554157B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Uwe Wahl · Munich, DE
• Ralf Rudolf · Dresden, DE
• Dirk Priefert · Moers, DE

Key dates

• Filing date: Sep 26, 2006
• Grant date: Jun 30, 2009
• Expiry date: Jun 30, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/148

Abstract

An SOI semiconductor component comprises a semiconductor substrate having a basic doping, a dielectric layer arranged on the semiconductor substrate, and a semiconductor layer arranged on the dielectric layer. The semiconductor layer includes a drift zone of a first conduction type, a junction between the drift zone and a further component zone which is configured in such a way that a space charge zone is formed in the drift zone when a reverse voltage is applied to the junction, and a terminal zone adjacent to the drift zone. A first terminal electrode is connected to the further component zone, and a second terminal electrode is connected to the terminal zone. In the semiconductor substrate a first semiconductor zone is doped complementarily with respect to a basic doping of the semiconductor substrate, and the first terminal electrode is connected to the first semiconductor zone. A rectifier element is connected between the first terminal electrode and the first semiconductor zone.