Thin film bulk acoustic wave resonator and filter, and radio frequency module using them
US7554427B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2007 |
| Grant date | Jun 30, 2009 |
| Priority date | — |
| Expiry date | Jul 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/605
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A thin film bulk acoustic wave (BAW) resonator structure and filter which can be fabricated by inexpensive manufacturing techniques and in smaller size than conventional such products are to be provided. The BAW resonator structure and filter have a substrate, a first BAW resonator placed over the substrate, an acoustic reflection layer placed over the first BAW resonator and a second BAW resonator placed over the acoustic reflection layer, and the acoustic reflection layer is electroconductive. Herein, the acoustic reflection layer constitutes a first electrode, and this first electrode electrically connects and acoustically separates the first BAW resonator and the second BAW resonator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.