Electro-optic modulator on rib waveguide
US7555173B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2004 |
| Grant date | Jun 30, 2009 |
| Priority date | — |
| Expiry date | Apr 9, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/307
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-optic modulator is formed on a silicon-on-insulator (SOI) rib waveguide. An optical field in the modulator is confined by using an electrically modulated microcavity. The microcavity has reflectors on each side. In one embodiment, a planar Fabry-Perot microcavity is used with deep Si/SiO2 Bragg reflectors. Carriers may be laterally confined in the microcavity region by employing deep etched lateral trenches. The refractive index of the microcavity is varied by using the free-carrier dispersion effect produced by a p-i-n diode formed about the microcavity. In one embodiment, the modulator confines both optical field and charge carriers in a micron-size region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.