Method of manufacture of semiconductor device and conductive compositions used therein
US7556748B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2005 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Jan 6, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) Zn-containing additive wherein the particle size of said zinc-containing additive is in the range of 7 nanometers to less than 100 nanometers; (c) glass frit wherein said glass frit has a softening point in the range of 300 to 600° C.; dispersed in (d) organic medium.The present invention is further directed to a semiconductor device and a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition as describe above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.